Overview & Method
Thermal boundary resistance at bonded interfaces often limits heat dissipation in 3D integrated circuits. Immersion thermo-optic phase spectroscopy (I-TOPS) measures the thermal resistance of buried interfaces non-destructively without requiring embedded temperature sensors.
In stacked die assemblies and direct wafer bonding, interfacial thermal resistance arises from atomic-scale roughness, interfacial oxide layers, and bond voids. Conventional optical thermometry is constrained by shallow penetration depths. By employing low modulation frequencies and immersion phase deflection detection, I-TOPS extends the thermal probing depth up to ~100 µm, isolating interface conductance from bulk substrate dissipation.
Technical Specifications
Thermal Probing Depth
Evaluates buried interfaces at depths up to ~100 µm beneath the sample surface.
Target Architectures
Direct-bonded semiconductor wafers, micro-bump interconnects, polymer underfills, and 3D die stacks.
Extracted Parameters
Thermal boundary resistance (TBR) and interfacial thermal conductance (G).
Metrology Configuration
Immersion thermo-optic phase deflection with low-frequency lock-in detection.
Request TBR Measurements
Let us know your requirements for TBR interface testing and we will get back to you with a quote.
Contact Us: info@cahillthermal.com